Reflection type liquid crystal display and a method for manufacturing the same

ABSTRACT

Disclosed is a reflection type liquid crystal display (LCD) and a manufacturing method thereof. A first substrate on which a pixel array is formed is prepared. A second substrate is formed facing the first substrate. A liquid crystal layer is formed between the first and second substrates. A reflective electrode is formed on the first substrate. The reflective electrode includes a plurality of first regions and a plurality of second regions having a height difference relative to the first regions, in which a first total sum in length components of the second regions arranged along a direction perpendicular to a first direction is greater than a second total sum in length components of the second regions arranged along a direction perpendicular to a second direction such that the second regions have higher reflectivity in the first direction relative to the second direction.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.10,928,210, filed on Aug. 30, 2004 now U.S. Pat. No. 7,206,045, which isa divisional of U.S. application Ser. No. 09/985,031 filed on Nov. 1,2001 and issued as U.S. Pat. No. 6,801,279, which claims priority toKorean Patent Application Nos. 2000-66972 filed on Nov. 11, 2000 and2001-5966 filed on Feb. 7, 2001, the disclosures of which areincorporated by reference herein in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a reflection type liquid crystaldisplay and a method for manufacturing the same, and more specifically,to a reflection type liquid crystal display having a plurality ofaligned micro lens and a method for manufacturing the same.

2. Description of the Related Art

In an information-oriented society these days, the role of an electronicdisplay is becoming more important. All kinds of electronic displays arewidely used in various industrial fields. As techniques of theelectronic display field are continuously developed, various electronicdisplays having new functions are provided corresponding to diverserequirements of the information society.

Generally, electronic display device is an apparatus for visuallytransmitting information to a person. That is, an electronic displaydevice can be defined as an electronic apparatus, which converts anelectrical information signal output from various electronic equipmentinto a visually recognizable optical information signal. Also, it may bedefined as an electronic apparatus serving as a bridge for connectingthe person and the electronic equipment.

These electronic displays are classified into an emissive display inwhich the optical information signal is displayed by a light-emittingmethod, and a non-emissive display in which the signal is displayed byan optical modulation method such as light-reflecting, dispersing andinterference phenomena, etc. As the emissive display called an activedisplay, for example, there are a CRT (Cathode Ray Tube), a PDP (Plasmadisplay panel), an LED (Light emitting diode) and an ELD(Eelectroluminescent Display), etc. The non-emissive display is called apassive display, an LCD (Liquid Crystal Display) and an EPID(Eelectrophoretic Image Display), etc fall in that category.

The CRT has been used in an image display such as a television receiverand a monitor, etc,, over the longest period of time. The CRT has thebiggest market share because of its high displaying quality and lowprice, but also has many disadvantages such as heavy weight, largevolume and high power consumption.

Meanwhile, as various kinds of electronic devices are small in size andlighter in weight and use lower voltage and less power in driving theelectronic devices due to rapid advancement of semiconductortechnologies, demands have been increased for a flat panel type displaybeing slimmer and lighter property as well as lower driving voltage andconsuming less power.

Among flat panel type displays, the LCD is much slimmer and lighter thanany other displays and it requires lower driving voltage and less powerconsumption. Also, the LCD has the displaying quality similar to theCRT. Therefore, the LCD is widely used in various electronic devices.Further, since the LCD can be manufactured relatively easily, itsapplication area becomes wider.

The LCD is classified into a transmissive type LCD, which displays animage using an external light source and a reflection type LCD, whichdisplays the image using ambient lights instead of the external lightsource.

The reflection type LCD has an advantage because it consumes less powerand shows an excellent display at outdoor compared to the projectiontype LCD. Further, the reflection type LCD is thin and light because anadditional light source such as backlight device is not required.

However, the current reflection type LCD shows darker image than itscompetition and fails to show a high resolution and multicolor images.Therefore, the reflection type LCDs are restrictively used for a productthat requires a simple pattern display, such as, numbers or simplecharacters.

To use a reflection type LCD for various electronic displays, a highresolution and a multicolor display together with an enhanced reflectionluminance are necessary. In addition, a proper brightness, rapidresponse time and higher contrast are necessary.

In current reflection type, LCDs, two technologies are combined toenhance the brightness. One is enhancing the reflection efficiency ofthe reflective electrode, and the other is achieving an ultra highaperture ratio.

There is disclosed a method for enhancing the reflection efficiency byforming bumps to a reflective electrode in U.S. Pat. No. 5,610,741(issued to Naofumi Kimur) entitled “Reflection type liquid crystaldisplay device with bumps on the reflector.”

FIG. 1 is a partial plan view of the reflection type LCD device providedin the '741 U.S. Pat. No. and FIG. 2 is a sectional view of thereflection type LCD device of FIG. 1.

Referring to FIG. 1 and FIG. 2, the reflection type LCD device has afirst substrate 10, a second substrate 15 disposed facing the firstsubstrate 10 and a liquid crystal layer 20 interposed between the firstsubstrate 10 and the second substrate 15.

The first substrate 10 includes a first insulating substrate 30 on whicha plurality of gate bus wirings 25 are formed. Gate electrodes 35 branchoff from the gate bus wirings 25. Additionally a plurality of source buswirings 40 are provided so as to cross the gate bus wirings 25. Thesource bus wirings are insulated from the plurality of gate bus wirings25 by means of an insulating layer. Source electrodes 45 branch off fromthe source bus wirings 40.

Reflective electrodes 50 are formed between the first substrate 10 andthe liquid crystal layer 20 and are disposed in a plurality ofrectangular regions formed by crossing the plurality of gate bus wirings25 and the plurality of source bus wirings 40.

The reflective electrode 50 is connected with thin film transistor (TFT)55 formed on the first substrate 10. The TFT 55 serves as a switchingdevice with the gate bus wiring 25 and the source bus wiring 40.

A plurality of dents 70 and 71 are provided on the surface of thereflective electrode 50, making the surface rugged.

The plurality of dents 70 and 71 are irregularly arranged on the entiresurface. The reflective electrode 60 and a drain electrode of the TFTdevice 55 are connected to each other through a contact hole 65.

The gate bus wiring 25 and the gate electrode 35 are formed on the firstinsulating substrate 30 made of, for example, glass by depositingtantalum (Ta) film using a sputtering method and patterning thedeposited Ta film using a photolithography method.

Next, the gate insulating film 75 is formed to cover the gate bus wiring25 and the gate electrode 35. The insulating film 75 is formed, forexample, to a thickness of 4000 Å. by depositing a SiNx film through aplasma CVD (Chemical Vapor Deposition) method.

A semiconductor layer 80 of amorphous silicon (a—Si) is formed on thegate insulating film 75 over the gate electrode 35. Contact layers 85and 90 of n+ type impurity-doped a—Si layer are formed on thesemiconductor layer 80.

Subsequently, molybdenum (Mo) film is formed on the first insulatingsubstrate 30 to cover the resultant structure formed in theabove-mentioned manner and then the Mo film is patterned to form asource bus wiring 40, a source electrode 45 and drain electrode 60. Insuch a manner, TFT 55 is manufactured.

On the entire surface of the insulating substrate 30 in which the TFTdevice 55 was formed are formed an organic insulating film 95 and areflective electrode 50 each having a rugged surface.

FIGS. 3A, 3B and 3C are sectional views showing the steps of forming theorganic insulating film and the reflective electrode in the device shownin FIG. 2.

Referring to FIG. 3A, a resist film 100 is formed on the surface of thefirst insulating substrate 30 to cover the TFT device 55 by a spincoating method. After that, the resist film 100 is pre-baked.

Next, a 110 where a light transmitting region 105 and a light shieldingregion 106 are formed in a predetermined pattern is arranged over theapplied resist film 100 and exposure and development treatments arecarried out. Thereby, bumps 115 corresponding to the pattern of the 110are formed. Thermal treatment to such a substrate is carried out,whereby a bump 115 whose angles are rounded off is formed as shown inFIG. 3B.

Referring to FIG. 3C, an organic insulating film 95 is applied to coverthe bumps 115, for example, by the spin coating method and thereby thesurface of the formed organic insulating film 95 becomes rugged due tothe bump 115.

Subsequently, the inorganic insulating film 95 is patterned using a mask(not shown) to form a contact hole 65 exposing a surface of the drainelectrode 60 of the TFT device 55. A metal film of aluminum (Al) ornickel (Ni) as a reflective electrode 50 is formed on the organicinsulating film 95. At this time, the contact hole 65 is filled with thereflective electrode material. The reflective electrode material isformed by the vacuum sputtering method. As a result, dents 70 and 71 areformed on the surface of the reflective electrode 50 such that they haveshapes corresponding to those of the organic insulating film 95.

Returning to FIG. 2 again, a first orientation film 120 is formed on thereflective electrode 50 and the inorganic insulating film 95, wherebythe first substrate 10 is completed.

The second substrate 15 includes a second insulating substrate 140 onwhich a color filter 125, a common electrode 130 and a secondorientation film 135 are formed.

The second insulating substrate 140 is comprised of glass. A colorfilter 125 corresponding to each of pixels 145 and 146 is formed on thesecond insulating substrate 140. On the color filter 125, is formed acommon electrode 130 of a transparent material such as ITO (Indium tinoxide), etc., and on the common electrode 130 is formed a secondorientation film 135. These elements make the second substrate 15.

The second substrate 15 is aligned over the first substrate such thatthe second substrate 15 faces the first substrate 10. Then, a liquidcrystal layer 20 including liquid crystal and pigment is injected into aspace between the first substrate 10 and the second substrate 15 using avacuum injection method, thereby completing a reflection type LCD.

However, although the conventional LCD enhances the reflectionefficiency by forming such a plurality of dents at the reflectiveelectrode, it has some problems as follows:

First, the conventional reflection type LCD has hemispherically shapeddents serving as micro lenses and having different sizes in order toenhance the reflection efficiency but the ridge portions where the dentsare not formed have different sizes depending on their positionsrendering the reflection efficiency non-uniform. In other words,different sizes of the ridge portions as well as different heights in aregion having different sizes of the dents cause different reflectionratios depending on the regions. This makes the reflection ratio of thereflective electrode non-uniform. Thus, the lowering of the reflectionuniformity in the reflective electrode results in the uniformity in theorientation of liquid crystal substance, which acts as a factor loweringthe contrast of an image displayed on an LCD. Also, there is a highprobability that the non-uniformity in the orientation of liquid crystalsubstance induces fog failure as well as light leakage and afterimage.

In addition, the conventional reflection type LD has a drawback becausedifferent sizes of the dents and different sizes of the regions betweenthe dents makes it difficult to precisely control the sizes of the dentsand the space between the dents to meet the specification in real world.

Furthermore, although the dents of different sizes overlap each other,the semispherical shapes of dents make it difficult to completely blocka scattered reflection of an incident light at the dents portion andthus it is limited to enhance the image quality.

Moreover, since the conventional reflection type LCD has a regularquadrilateral pixel shape, it has drawbacks in that not only a designshould be performed from the start point so as to apply it to displayswhich request respective different pixel sizes and alteration of pixelsizes depending on the variety of information telecommunicationapparatus such as hand-held terminals or liquid crystal televisionreceivers but also a process condition should be newly secured.Especially, it is very difficult to apply it to electronic displays suchas a mobile phone requesting to show a high reflectivity along aspecific direction.

SUMMARY OF THE INVENTION

Therefore, it is an object of the present invention to provide areflection type LCD including a reflective electrode having a pluralityof oriented micro lenses so as to enhance the reflection efficiency.

It is another object of the present invention to provide a method forforming a reflective electrode of an LCD that is especially suitable forthe oriented lens type reflection type LCD and enables to considerablydecrease the process time and costs.

It is still another object of the present invention to provide anelectronic display device including a reflective electrode having a highreflection rate along a specific direction.

It is further still another object of the present invention to provide amethod for manufacturing an electronic display which is especiallysuitable for the manufacturing of the electronic display deviceincluding a reflective electrode having a high reflection rate along aspecific direction.

It is yet still another object of the present invention to a reflectiontype LCD capable of resolving a problem occurring due to a steppedportion of a boundary portion between in inner region of a pixel and anouter region of the pixel and thereby obtaining a uniform image quality.

It is yet further still another object of the present invention toprovide an electronic display device including a reflective electrodecapable of resolving a problem occurring due to a stepped portion of aboundary portion between an inner region of a pixel and an outer regionof the pixel and thereby obtaining a uniform image quality.

To achieve the aforementioned one object of the present invention, thereis provided a reflection type LCD comprising: a first substrate on whicha pixel array is formed; a second substrate formed facing the firstsubstrate; a liquid crystal layer formed between the first and secondsubstrates; and a reflective electrode formed on the first substrate andincluding a plurality of first regions and a plurality of second regionshaving a height difference relative to the first regions, a first totalsum in first lengths of the second regions arranged perpendicular to afirst direction being greater than a second total sum in second lengthsof the second regions arranged perpendicular to the second directionsuch that the second regions have higher reflectivity in the firstdirection than the second direction.

To accomplish the aforementioned another objects of the presentinvention, there is provided a method for manufacturing a reflectiontype LCD comprising the steps of: forming a pixel array on a firstsubstrate; forming an organic insulating film on the resultant structureof the first substrate, wherein the organic insulating film comprises aplurality of first regions and a plurality of second regions having aheight difference relative to the first regions wherein the secondregions are formed so that a first total sum in first length componentsof the second regions arranged along a direction perpendicular to afirst direction is greater than a second total sum in second lengthcomponents of the second regions arranged along a directionperpendicular to a second direction such that the second regions have ahigher reflectivity in the first direction than the second direction;forming a reflective electrode on the organic insulating film; forming asecond substrate facing the first substrate, and forming a liquidcrystal layer between the first substrate and the second substrate.

To accomplish the aforementioned still another object of the presentinvention, there is provided an electronic display device comprising: aninsulating substrate on which a pixel array is formed; and reflectivemeans connected to the pixel array and including a plurality of firstregions and a plurality of second regions having a height differencerelative to the first regions, wherein the second regions are formed sothat a first total sum in first length components of the second regionsarranged along a direction perpendicular to a first direction is greaterthan a second total sum in second length components of the secondregions arranged along a direction perpendicular to a second directionand thus the second region has higher reflectivity in the firstdirection than the second direction.

To accomplish the aforementioned still another object of the presentinvention, there is provided a method of manufacturing an electronicdisplay device comprising the steps of: forming a pixel array on aninsulating substrate, and forming a reflective means on the resultantstructure of the first substrate, wherein the reflective electrode isconnected to the pixel array and comprises a plurality of first regionsand a plurality of second regions having a height difference relative tothe first regions, wherein the second regions are formed so that a firsttotal sum in first length components of the first regions arranged alonga direction perpendicular to a first direction is greater than a secondtotal sum in second length components of the second regions arrangedalong a direction perpendicular to a second direction and thus thesecond regions have a higher reflectivity in the first directionrelative to the second direction.

To accomplish the aforementioned yet still another object of the presentinvention, there is provided a reflection type LCD comprising: a firstsubstrate on which a pixel array is formed; a second substrate formedfacing the first substrate; a liquid crystal layer formed between thefirst and second substrates; a reflective electrode formed on the firstsubstrate and including a plurality of first regions and a plurality ofsecond regions having a height difference relative to the first regionsfor light scattering, wherein a first total sum in first lengthcomponents of the second regions arranged along a directionperpendicular to a first direction is greater than a second total sum insecond length components of the second regions arranged along adirection perpendicular to a second direction such that the secondregions have higher reflectivity in the first direction relative to thesecond direction, and an organic insulating film arranged between thefirst substrate and the reflective electrode and having a same surfacestructure as that of the reflective electrode, wherein the surfacestructure of the organic insulating film extends to outside a boundaryof a unit pixel.

To accomplish the aforementioned yet further still another object of thepresent invention, there is provided an electronic display devicecomprising: an insulating substrate on which a pixel array is formed;reflective means connected to the pixel array and including a pluralityof first regions and a plurality of second regions having a heightdifference relative to the first regions for light scattering, wherein afirst total sum in first length components of the second regionsarranged along a direction perpendicular to a first direction is greaterthan a second total sum in second length components of the secondregions arranged along a direction perpendicular to a second directionsuch that the second regions have a higher reflectivity in the firstdirection relative to the second direction; and an organic insulatingfilm arranged between the first substrate and the reflective electrodeand having the same surface structure as that of the reflectiveelectrode, wherein the surface structure of the organic insulating filmextends to outside a boundary of a unit pixel.

In accordance with the present invention, a plurality of first groovesarranged continuously along the horizontal direction, a plurality ofsecond grooves arranged discontinuously along the vertical direction anda reflective electrode of oriented micro lenses defined by the firstgrooves and the second grooves are formed to thereby have an enhancedreflection efficiency with respect to a specific direction compared withthe conventional reflection type LCD. Accordingly, the contrast andimage quality may be improved remarkably. Also, since the micro lensesare oriented along the horizontal or vertical direction of the pixel itis suitable for electronic displays that need a high reflectivity withrespect to a specific direction. Further, since the reflectiveelectrodes may be formed by an improved exposure and developmentprocess, the manufacturing cost and time would be reduced. When thegroove filling member having a variety of shapes is formed at thecrossing points of the grooves in the reflective electrode, thereflectivity of the reflective electrode may be improved more highly tolargely improve the contrast and image quality. When forming the organicinsulating film, the grooves are formed at an outer region betweenpixels in the same manner as in the inner region of the pixel. Thus, aheight difference between the pixel region and the outer region betweenpixels becomes minimal. Accordingly, the light leakage inducedafter-image or distortion phenomenon in orientation of liquid crystalmay be eliminated.

BRIEF DESCRIPTION OF THE DRAWINGS

The above objects and other advantages of the present invention willbecome more apparent by describing preferred embodiments thereof indetail with reference to the attached drawings.

FIG. 1 is a partial plan view of a conventional reflection type LCD.

FIG. 2 is a sectional view of the conventional reflection type LCD ofFIG. 1.

FIGS. 3A, 3B and 3C are sectional views illustrating a process forforming organic insulating film and reflective electrode in the LCD ofFIG. 2.

FIG. 4 is a sectional view of a reflection type LCD in accordance with afirst embodiment of the present invention.

FIG. 5A is a plan view of the reflective electrode in the LCD of FIG. 4and FIG. 5B is a plan view of the reflective electrode in accordancewith another embodiment of the present invention.

FIGS. 6A, 6B, 6C and 6D are sectional views illustrating a manufacturingprocess of the reflection type LCD shown in FIG. 4.

FIGS. 7A and 7B are sectional views particularly showing steps offorming a contact hole and a plurality of grooves at an upper surface ofthe organic insulating film as shown in FIG. 6B.

FIGS. 8A, 8B and 8C are sectional views illustrating a process offorming a reflective electrode in accordance with a second embodiment ofthe present invention

FIG. 9 is a plan view of a reflective electrode in accordance with athird embodiment of the present invention.

FIGS. 10A, 10B, 10C and 10D are partially enlarged views of a reflectiveelectrode in accordance with a fourth embodiment of the presentinvention.

FIG. 11 is a sectional view of a reflective electrode in accordance witha fifth embodiment of the present invention.

FIGS. 12A, 12B and 12C are sectional views illustrating a manufacturingprocess of the LCD shown in FIG. 11.

FIG. 13A is a plan layout of a reflection type LCD having a reflectiveelectrode in accordance with a sixth embodiment of the present inventionand FIG. 13B is a schematic sectional view taken along the line A-A′.

FIGS. 14A, 14B, 14C and 14D are sectional views illustrating amanufacturing process of the reflection type LCD shown in FIGS. 13A and13B.

FIGS. 15A and 15B are sectional views particularly illustrating thesteps of forming the contact hole and the plurality of grooves at theupper surface of the organic insulating film.

FIG. 16 is a plan view showing a layout of a pattern formed on thesecond mask.

FIGS. 17A, 17B, 17C, 17D and 17E are plan views showing mask patternsfor forming a reflective electrode in accordance with anotherembodiments of the present invention.

FIGS. 18A, 18B, and 18C are plan views of reflective electrodes (or maskpatterns) corresponding to a unit pixel in order to form a reflectiveelectrode in accordance with embodiments of the present invention.

FIGS. 19A and 19B are graphs showing variations in the reflectivitymeasured by using an LCD having the reflective electrode shown in FIG.18A.

FIGS. 20A and 20B are graphs showing a variation in the reflectivitymeasured in a view angle using an LCD having the reflective electrodeshown in FIG. 18B.

FIGS. 21A and 21B are graphs showing a variation in the reflectivitymeasured in a view angle using an LCD having the reflective electrodeshown in FIG. 18C.

FIGS. 22A and 22B are graphs showing a variation in the reflectivitymeasured in a view angle using an LCD having the reflective electrodeshown in FIG. 9.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Now, reflection type LCDs and manufacturing methods thereof inaccordance with preferred embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings.

Embodiment 1

FIG. 4 is a sectional view of a reflection type LCD in accordance with afirst embodiment of the present invention.

Referring to FIG. 4, a reflection type LCD includes a first substrate210 on which a pixel array is formed, a second substrate 220 formedfacing the first substrate 210, a liquid crystal layer 230 formedbetween the first substrate 210 and the second substrate 220, and areflective electrode 235 functioning as pixel electrode, which is formedbetween the first substrate 210 and the liquid crystal layer 230.

The first substrate 210 includes a first insulating substrate 240 and athin film transistor (TFT) 245 as a switching device formed on the firstinsulating substrate 240.

The first substrate 210 is comprised of a nonconductive material, forinstance, glass, ceramic, etc. The TFT 245 includes a gate electrode250, a gate insulating film 255 a semiconductor layer 260, and ohmiccontact layer 265, a source electrode 270 and a drain electrode 275.

The gate electrode 250 is formed branched from a gate line (not shown)on the first insulating substrate 240 and has a double layered structurein which a lower layer is comprised of chromium (Cr) and an upper layeris comprised of aluminum (Al).

The gate insulating film 255 is comprised of silicon nitride(Si_(x)N_(y)) and is formed on the entire surface of the firstinsulating film 240 on which the gate electrode 250 is formed. On thegate insulating film 255 are formed the semiconductor layer 260 ofamorphous silicon and the ohmic contact layer 265 of n+amorphous siliconsequentially.

The source electrode 270 and the drain electrode 275 are formed on theohmic contact layer 265 and the gate insulating film 275. The gateelectrode 250 is disposed between the source electrode 270 and the drainelectrode 275, thereby completing the TFT 245. The source electrode 270and the drain electrode 275 are comprised of a metal such as tantalum(Ta), molybdenum (Mo), titanium (Ti), chromium (Cr), etc.

On the first insulating substrate 240 on which the TFT 245 is formed,deposited is an organic insulating film 280 comprised of a resistmaterial. A contact hole 285 is formed in the organic insulating film280, to expose a portion of the drain electrode 275.

On the organic insulating film 280 including the contact hole 285 isformed the reflective electrode 235. The reflective electrode 235 isconnected to the drain electrode 275 through the contact hole 285 andthus the TFT 245 is electrically coupled to the reflective electrode235.

FIG. 5A is a detailed plan view of the reflective electrodecorresponding to a unit pixel in the device of FIG. 4.

As shown in FIG. 5A, the reflective electrode 235 in accordance with thepresent embodiment includes a plurality of first region portions 290 anda plurality of second region portions 295 having a height differencerelative to the first region portions 290. A first total sum in firstlength components of the second region portions 295 arranged along asecond direction (horizontal direction) perpendicular to a firstdirection (vertical direction) is greater than a second total sum insecond length components of the second region portions 295 arrangedalong the first direction perpendicular to the second direction suchthat the second region portions 295 have higher reflectivity in thefirst direction relative to the second direction.

For example, the first regions 290 may have a recess shape lower inheight relative to the second region portions 295 and the second regionportions 295 have a protrusion shape higher in height relative to thefirst region portions 290 or, the first region portions 290 may have aprotrusion shape higher in height relative to the second region portions295 and the second region portions 295 have a recess shape lower inheight relative to the first region portions 290.

The first region portions 290 include first plural grooves 290 a formedin succession along the horizontal direction. Also, between the adjacentfirst grooves 290 a are formed second plural grooves 290 bdiscontinuously along the vertical direction. In FIG. 5A, the secondgrooves 290 b are formed in the form of an arc such that an incidentlight can be reflected to various directions as well as to the firstdirection and the second direction. The second grooves 290 b can be alsomade to have an arbitrary form such as a straight line shape, a ringshape, etc.

Preferably, the second grooves 290 b are arranged to miss each other onthe way with an adjacent groove while arranged along the verticaldirection. Preferably, the number of the second grooves formed along thevertical direction is 0.5 to 5 per each horizontal line of the unitpixel.

The second region portions 295 include a plurality of protruded portionsfunctioning as micro lens. In other words, the first region portions 290consisting of continuous recesses in the reflective electrode 235 areleveled to a certain depth at a lower place relative to the secondregion portions 295 which are protruded. Also, the second regionportions 295 consisting of protruded portions relative to the firstregion portions 290 are formed to have a certain height on the firstsubstrate 210. The second region portions 295 serving as the micro lensfor enhancing the reflection efficiency are surrounded by the firstregion portions 290 consisting of the first grooves 290 a and the secondgrooves 290 b together with a boundary of a unit pixel. In other words,one of the second region portions 295 is defined by first two grooves290 a adjacent to each other and second two grooves 290 b at the centerportion of a unit pixel region. The second region portions 295 adjacentto the boundary of the unit pixel region are defined by first twogrooves 290 a adjacent to each other, one of the second grooves 290 band a part of the boundary of the unit pixel.

Due to the directionality of the first region portions 290, theprotruded portions of the second region portions 295 are oriented alongthe first direction of the horizontal direction of a unit pixel and thesecond direction of the vertical direction of the unit pixel.Accordingly, LCDs in accordance with the present embodiment areapplicable to displays that request a relatively higher reflectivityalong a specific direction than to other directions.

According to the present embodiment, the plurality of protruded portionsof the second region portions 295 have various shapes such as an ellipseshape 295 a, a waxing crescent moon shape or a waning moon shape 295 b,a sectional surface shape of a concave lens 295 c, a track shape 295 d,a hemi-track shape 295 e, etc. Also, although the protruded portions ofthe second region portions 295 have the same shape, they have differentsizes from each other.

Both the first groove 290 a and the second groove 290 b in the firstregion portions 290 have a width range of approximately 2-5 μm. Theprotruded portions of the second region portions 295 have various sizeswithin a range of approximately 4-20 μm. An interval between the centerlines of the first grooves 290 a formed parallel to each other along thehorizontal direction is set in the range of 5-20 μm and approximately8.5 μm in average. An interval between the ridges of the protrudedportions of the second region portions 295 is set in the range of 12-22μm, approximately 17 μm in average. Thus, shapes and sizes of theprotruded portions of the second region portions 295 change variously,minimizing interference of light reflected by the reflective electrode.

FIG. 5B is a detailed plan view of a reflective electrode in accordancewith another preferred embodiment of the present invention.

The reflective electrode of FIG. 5B is the same as that of FIG. 5Aexcept for a scattering recess 295 formed at the center portion of eachof the second region portions 295. The scattering recess 297 preventsdirect reflection of incident light and scatters the incident light. Thesize of the scattering recess 297 is preferably in the range of 2-3 μm.

Returning to FIG. 4, a first orientation film 300 is disposed on thereflective electrode 235 with a structure as mentioned before.

The second substrate 220 facing the first substrate 210 includes asecond insulating substrate 305, a color filter 310, a common electrode315, a second orientation film 320, a phase difference plate 325 and apolarizing plate 330.

The second insulating substrate 305 is comprised of glass or ceramicmaterial, which is the same material as the first insulating substrate240. The phase difference plate 325 and the polarizing plate 330 areformed on the second insulating substrate 305 in the named order. Thecolor filter 310 is disposed below the second insulating substrate 305and the common electrode 315 and the second orientation film 320 areformed below the color filter 310 in the named order, thereby completingthe second substrate 220. The second orientation film 320 pre-tiltsliquid crystal molecules of the liquid crystal layer 230 together withthe first orientation film of the first substrate 210.

Spacers 335 and 336 are interposed between the first substrate 210 andthe second substrate 220 to thus form a certain space between the firstsubstrate 210 and the second substrate 220 and the liquid crystal layer230 is filled in the space formed by the spacers 335 and 336, therebycompleting a reflection type LCD 200 in accordance with the presentembodiment.

Hereinafter, a method for manufacturing a reflection type LCD inaccordance with the present embodiment is in detail described withreference to the accompanying drawings.

FIGS. 6A, 6B, 6C and 6D are sectional views illustrating a method formanufacturing the reflection type LCD shown in FIG. 4 in accordance withthe first embodiment of the present invention. Throughout FIGS. 6A, 6B,6C and 6D, the same elements are designated by the same referencenumerals.

Referring to FIG. 6A, on a first insulating substrate of glass orceramic is deposited a metal layer such as tantalum (Ta), titanium (Ti),molybdenum (Mo), aluminum (Al), chromium (Cr), copper (Cu), tungsten(W), etc. Thereafter, the deposited metal layer is patterned to form agate line and a gate electrode 250. At this time, the gate electrode 250and the gate line may be comprised of an alloy of Al—Cu or Al—Si—Cu.Afterwards, a silicon nitride film is deposited on the entire surface ofthe first insulating substrate 240 including the gate electrode 250 by aplasma chemical vapor deposition method and thus a gate insulating film255 is formed.

On the gate insulating film 255 are formed an amorphous silicon film andin-situ-doped n+ amorphous silicon film in the named order by a plasmachemical vapor deposition method. Thereafter, the amorphous silicon filmand in-situ-doped n+ amorphous silicon film are patterned tosequentially form a semiconductor layer 260 and an ohmic contact layer265 on the gate insulating film 255 on which the gate electrode 250 isplaced. Subsequently, a metal layer is formed of metal such as tantalum(Ta), titanium (Ti), molybdenum (Mo), aluminum (Al), chromium (Cr),copper (Cu), tungsten (W), etc. Then, the metal layer is patterned toform a source electrode 270 and a drain electrode 275 as well as asource line. Thus, a thin film transistor 245 including the gateelectrode 250, the semiconductor layer 260, the ohmic contact layer 265,the source electrode 270 and the drain electrode 275 is completed. Atthis time, the gate insulating film 255 is interposed between the gateline and the source line, thereby preventing the gate line fromcontacting the source line.

Next, a photoresist film is coated on the first insulating substratehaving the thin film transistor 245 to a thickness of approximately 1-3μm by a spin coating method. Then, an organic insulating film 280 isformed to thereby complete the first substrate 210. At this time, theorganic insulating film 280 may be comprised of, for example, acrylresin containing a PAC (Photo-active compound), etc.

Referring to FIG. 6B, a first mask 350 is aligned over the organicinsulating film 280 to form a contact hole 285 and then the organicinsulating film is patterned through an exposure and development processto thereby form the contact hole 285 partially exposing the drainelectrode 275 and a plurality of grooves.

A process of forming the contact hole 285 at the organic insulating film280 and a process of forming the plurality of grooves are described asfollows.

FIG. 7A and FIG. 7B are sectional views for describing a process offorming the contact hole and the plurality of grooves at the organicinsulating film 280.

Referring to FIG. 7A and FIG. 7B, the first mask 350 is aligned over theorganic insulating film 280 so as to form the contact hole 285. Thefirst mask 350 has a pattern corresponding to the contact hole 285.Afterwards, the organic insulating film 280 is subject to a first fullexposure process to thereby expose the portion of the organic insulatingfilm 280 on the source/drain electrode 275. Thereafter, the exposedorganic insulating film 280 is developed to form the contact hole 285exposing the source/drain electrode 275 in the organic insulating film,as shown in FIG. 7A.

Next, in order it form the plurality of grooves, a second mask 355having a pattern corresponding to the grooves and for forming micro lensis aligned over the organic insulating film 280, as shown in FIG. 7B. Atthis time, the second mask 355 includes the same pattern as thereflective electrode 235 shown in FIGS. 5A and 5B. Also, depending onthe types of resist, the second mask 355 may have a pattern having areversed shape to the reflective electrode 235 of FIG. 5A and FIG. 5B.

Specifically, the second mask 355 is fabricated by forming a maskpattern corresponding to the first region shown in FIG. 5A on atransparent substrate. Also, as shown in FIG. 5B, the second mask 355may further have a center recess pattern having a size of 2-3 μm. Thus,by forming the center recess at the center portion of the organicinsulating film, the reflection efficiency can be improved.

After exposing the organic insulating film 280 except the contact holeportion 285 using the second mask 355, it is developed to form aplurality of irregular grooves 281 at the surface of the organicinsulating film 280. In other words, there are formed a plurality ofcontinuous grooves 281 consisting of first grooves having a constantwidth along the first direction of the horizontal direction of the unitpixel and the second grooves irregularly arranged along the seconddirection of the vertical direction of the unit pixel at the organicinsulating film 280. Thus, the surface of the organic insulating film280 is classified into the first region portions consisting of aplurality of continuous grooves and the second region portionsconsisting of a plurality of protruded portions surrounded by boundaryportions of the unit pixels and the first region portions.

In other words, after forming a plurality of grooves having a constantwidth along the horizontal direction of the unit pixel, a plurality ofgrooves are formed at protruded portions relative to these grooves alongthe vertical direction of the unit pixel, thus protruded portionsdefined by the plurality of grooves are formed at the organic insulatingfilm 280. Preferably, the vertically formed grooves have asemi-spherical sectional shape.

As aforementioned, the first grooves formed along the horizontaldirection of the unit pixel and the second grooves formed along thevertical direction of the unit pixel have a size of 2-5 μm and theprotruded portions defined by these grooves have a size of 4-20 μm.Also, the number of the second grooves, formed along the verticaldirection relates to the reflectivity in the first direction of thehorizontal direction and the reflectivity in the second direction of thevertical direction, so that the number can be varied and is preferably0.52-5 every single horizontal line of a pixel unit. The shapes of thesecond grooves affect on all types of reflectivity except the verticalreflectivity of the pixel. To this end, when equivalent reflectivity isrequested with respect to all directions, it is advantages to add astraight line component in a direction perpendicular to a desireddirection. Accordingly, it is advantage that the protruded portions 280formed at the organic insulating film have a shape in which theirlengths extend in various sizes along the vertical direction, forexample, straight line or arc shape. Upon considering the reflectivityof the pixel in a specific direction, it is preferable to allow thegrooves formed along the vertical direction not to meet with theadjacent grooves formed along the vertical direction. (refer to F1G. 5)Also, the second grooves can be formed connected with the first groovesor separated from the first grooves.

In addition, by further forming a groove having a crater shape at theprotruded portion of the organic insulating film 280 using the maskshown in FIG. 5, the reflectivity of the reflective electrode 235 formedon the organic insulating film 280 can be enhanced more highly.

Referring to FIG. 6C, as aforementioned, after a metal layer having agood reflectivity such as aluminum (Al), nickel (Ni), chromium (Cr),silver (Ag), etc., is deposited on the organic insulating film 280 inwhich a plurality of grooves 281 are formed, the deposited metal layeris patterned in a pixel shape to thereby form a reflective electrode235. Subsequently, a resist is coated on the reflective electrode 235and is then rubbed to thereby form a first orientation film 300, whichallows liquid crystal molecules in the liquid crystal layer to bepre-tilted by a selected angle.

The reflective electrode 235 has the same shape as the surface of theorganic insulating film 280. In other words, the first region 290corresponding to the groove 281 of the organic insulating film 280 has astructure in which a plurality of grooves formed along the firstdirection of the horizontal direction with a certain width arecontinuously arranged together with a plurality of grooves formedirregularly along the second direction of the vertical direction. Thedirectionality of the reflective electrode 235 in the first region andthe protruded portions of the second region 295 aligned along the firstdirection of the vertical direction of the pixel and the seconddirection of the horizontal direction of the pixel highly enhance thereflectivity in a specific direction such as the vertical direction.

The reflective electrode 235 is divided into first region portions 290of a plurality of grooves formed on the groove 281 of the organicinsulating film 290 and second region portions 295 of micro lensesregions which are a plurality of protruded portions. Here, the firstregion portions 290 are continuous grooves and are leveled at a lowplace relative to the second region portions 295. Since the secondregion portions 295 are surrounded by the first region portions 290, thereflective electrode 235 has a structure defined by the first regionportions 290 that are continuous grooves of the second region portions.

In the present embodiment, the plurality of grooves composing the firstregion portions of the reflective electrode 235 have a width ofapproximately 2-5 μm and the plurality of grooves composing the secondregion portions 29O have a variety of shapes and at the same time have asize of approximately 4-20 μm as shown in FIGS. 5A and 5B.

Referring to FIG. 6D, a color filter 310, a transparent common electrode310 and a second orientation film 320 are formed in the named order on asecond insulating substrate 305, thereby completing the second substrate220. Thereafter, the second substrate 220 is disposed to face the firstsubstrate. The first substrate 210 and the second substrate 220 arecoupled to each other with interposing spacers 335 between the firstsubstrate 210 and the second substrate 220, so that a space is formedbetween the first substrate 210 and the second substrate 220. Then, asliquid crystal is injected into the space between the first substrate210 and the second substrate 220 using a vacuum injection method andthus the liquid crystal layer 230 is formed, thereby completing thereflection type LCD 200 in accordance with the present embodiment. Also,if necessary, a polarizing plate 330 and a phase difference plate 325can be attached on the front surface of the second substrate 220.Although not shown in the drawings, a black matrix can be arrangedbetween the second insulating substrate 305 and the color filter 310.

Embodiment 2

Unlike the aforementioned Embodiment 1, the present embodiment allowsthe contact hole and the plurality of grooves to be formed at theorganic insulating film by using a masking work only once.

Generally, there are two kinds of method in manufacturing the reflectiveelectrode serving as the reflection plate of an LCD. One is a processusing a single layered organic insulating film and the other is aprocess using double organic insulating films.

In these two methods, the latter process using the double organicinsulating films repeats a process of coating, exposing and developingthe organic insulating film twice. In other words, after the firstcoated organic insulating film is fully exposed to form the protrudedportions at the first coated organic insulating film, a second organicinsulating film is coated on the first organic insulating film, isexposed and is patterned, to thereby form a contact hole exposing thesource/drain electrode. This method can produce a reflective electrodeof high reflectivity formed on the organic insulating film but itsprocess is complicated and expensive.

Because of these drawbacks, the method using single organic insulatingfilm is mainly used to form the reflective electrode.

As shown in FIG. 7A and FIG. 7B, after the organic insulating film 280is coated on the entire surface of the first insulating substrateincluding the source/drain electrode 275, the first mask 350 for formingthe contact hole is loaded in an exposure apparatus and then a portioncorresponding to the contact hole of the organic insulating film 280 isfirstly exposed using the first mask 350. After the first exposing stepis completed, a second mask 355 for forming lenses is loaded into theexposure apparatus and portions which micro lenses are being formedexcept for the contact hole 285 are secondly exposed. The first andsecondly exposed portions are then developed to thereby form the contacthole 285 and micro lenses portions at the same time.

However, since the aforementioned process needs to load the masks twiceand needs to be exposed twice to form the contact hole and lens formingportions, there is increasing likelihood of an unnecessary work failurealong with an increase in the whole exposure time.

The present embodiment is for enhancing the efficiency in the exposureprocess and has the following manufacturing process.

FIGS. 8A, 8B and 8C are sectional views for describing a process forforming a reflective electrode in accordance with the presentembodiment.

Referring to FIG. 8A, an organic insulating film 370 is formed to athickness of approximately 1-3 μm by a spin coating method on the entiresurface of an insulating substrate 360 on which source/drain electrode365 is formed. Then, a first mask 375 having a certain pattern isaligned over the organic insulating film 370 so as to form a contacthole 385. Afterwards, the organic insulating film 370 is subject to apartial exposure process. At this time, a partial exposure amount of theorganic insulating film 370 through the first mask 375 becomes a valuewhich a lens exposure amount is subtracted from the full exposure amountdescribed in FIGS. 6C and 6D. In other words, when the partial exposureamount is “P,” the full exposure amount is “F” and the lens exposureamount is “R,” the partial exposure amount is obtained from thefollowing Equation 1:P=F−R  Eq. 1

In this case, it is preferable that the partial exposure amount “P” isapproximately 50% of the full exposure amount “F.” According to thispartial exposure, the contact hole 385 is formed at the organicinsulating film 370 by half of a target depth.

As shown in FIG. 8B, in order to form micro lenses at the upper surfaceof the organic insulating film 370 as partially exposed, a second mask380 having a predetermined pattern is aligned over the organicinsulating film 370. Then, the organic insulating film 370 is exposed tothe light through the second mask 380 to form a plurality of grooves 371at the surface of the organic insulating film 370 and at the same timeto form the contact hole 385 exposing source/drain electrode 360. Here,the second mask 380 has a pattern capable of exposing the contact holeportion 385 together with the micro lenses portion. Thus, the portion ofthe organic insulating film 370 corresponding to the contact hole 385 isexposed twice and thus is hollowed out deeper than the portion where theplurality of grooves 371 are formed, so that the plurality of grooves371 can be formed simultaneously with the contact 385 that exposes thesource/drain electrode 360.

In other words, according to the present embodiment, after loading theinsulating substrate 360, the first mask 375 for forming the contacthole and the second mask 380 for forming the micro lenses, the contacthole portion of the organic insulating film 370 is firstly exposed usingthe first mask 375 for forming the contact hole by partially exposingthe organic insulating film 370 with an exposure amount in which thelens exposure amount suitable for forming the lenses is subtracted fromthe full exposure amount suitable for forming the contact hole.Thereafter, the lens forming portion and the contact hole formingportion of the organic insulating film 370 are exposed simultaneouslyusing the second mask 380 for forming the lenses, so that the portion ofthe organic insulating film 370 where the contact hole 385 is beingformed is exposed twice and thus is hollowed out deeper than the portionwhere the plurality of grooves 371 are formed, but the groove portion,i.e., the portions where the lenses are being formed is exposedshallower relative to the contact hole portion so that the plurality ofgrooves 371 can be formed simultaneously with the contact hole 385 atthe organic insulating film 370. Thus, since one work file allows twoprocesses, an exposure time is saved by once loading time of theinsulating substrate and mask and a time in which the lens exposureamount is subtracted from the full exposure amount, so that time andcosts taken in performing the processes are saved to a large degree.Particularly, since the number of shoots per substrate is high in thesmall and middle sized reflection type LCDs such as hand-held terminalsor LCD television receivers, for instance, the exposure time can besaved by 30% and more compared with that by the conventional art,totally the process time can be remarkably shortened.

Referring to FIG. 8C, as described previously, a metal layer having anexcellent reflectivity such as aluminum (Al), nickel (Ni), chromium(Cr), silver (Ag), etc., is deposited on the resultant organicinsulating film 370 including the contact hole 385 and then patterned toform a reflective electrode 390. In this case, the reflective electrode390 is formed in a structure matched with the structure of theunderlying organic insulating film 370 as aforementioned. Sinceprocesses forming the reflective electrode are the same as those ofEmbodiment 1 shown in FIGS. 6C and 6D, their descriptions would beomitted.

Embodiment 3

FIG. 9 is a plan view showing the pattern of a reflective electrode inaccordance with the present embodiment. In the present embodiment, sinceelements other than the profile of the reflective electrode 400 and theprofile of the organic insulating film deciding the shape of thereflective electrode 400 are the same as in Embodiment 1, theirdescriptions would be omitted.

Referring to FIG. 9, the pattern of the reflective electrode 400 inaccordance with the present embodiment includes a plurality of firstregion portions 410 and a plurality of second region portions 405. Thefirst region portions 410 have a plurality of first grooves 410 a formedparallel to each other along the horizontal direction of the pixel and aplurality of second grooves 410 b formed discontinuously along thevertical direction of the pixel. The second region portions 405 consistof a plurality of protruded portions surrounded by the first regionportions 410 together with the boundary line of the pixel. The protrudedportions 405 a, 405 b, 405 c, etc. which form the second region portions405 are defined by the plurality of grooves formed along the horizontaland vertical direction and thus have an island-like shape. A groovefilling protrusion 406 is formed at a selected respective protrudedportions 405 a, 405 b and 405 c. The protruded portions of the secondregion portions 405 are largely divided into those which the groovefilling protrusion is formed and those which the groove fillingprotrusion is not formed.

In the present embodiment, the shapes of the plurality of grooves, theplurality of protruded portions 405 a, 405 b, 405 c and the groovefilling protrusion 406 for forming the reflective electrode 400 aredecided depending on the pattern of the mask for patterning the organicinsulating film that is formed under the reflective electrode 400. Inother words, FIG. 9 shows a pattern shape of the reflective electrode400 but it can be also described as the pattern shape of the organicinsulating film or the pattern shape of the mask for patterning theorganic insulating film. As shown in FIG. 9, the mask also has patternscorresponding to the plurality of grooves and further includes groovefilling patterns for forming the groove filling protrusions 406 at thecrossing points of the first grooves 410 a and the second grooves 410 b.

In order to form the reflective electrode in accordance with the presentembodiment, a process for exposing the underlying organic insulatingfilm is performed in accordance with the process as in Embodiment 2 butthe exposure process can be also performed in accordance with theprocess as in Embodiment 1.

The plurality of grooves comprising the first region portions 410 thatare recessed portions relative to the second region portions 405 have awidth of approximately 2-5 μm respectively. These continuous grooves areirregularly arranged at a constant width along the horizontal directionof the pixel and are formed such that grooves formed along the verticaldirection do not meet with an adjacent groove on a straight line in thevertical direction. In other words, the vertically arranged groovescrossing the protruded portions of the second region portions 405 areformed such that they do not meet each other in a straight line. Sincethe number of these grooves crossing the protruded portions of thesecond region portions 405 relate to the reflectivity in the horizon andvertical directions, it varies depending on the size of the pixel but itis preferably in a 0.5-5 per single horizontal line of a pixel. Also,the grooves arranged along the vertical direction and formed so as tocross the protruded portions are preferably in a hemispherical sectionalshape. Since the shape of the vertically arranged grooves affects thereflectivity in all directions except for the vertical reflectivity ofthe reflective electrode 400, it is preferable to be shaped ofhemisphere so as to show the same reflectivity with respect to the wholedirections. However, in order for the reflective electrode 400 to showan asymmetrically high reflectivity along a specific direction, it isdesirous to add a straight line component along a directionperpendicular to a desired direction. Also, the groove fillingprotrusions 406 extending from the protruded portions of the secondregion portions 405 are positioned at the crossing points of thevertically arranged second grooves 410 b and the horizontally arrangedfirst grooves 410 a. These groove filling protrusions 406 allow thegrooves formed at the organic insulating film to have a uniform depthduring the exposure and developing process of the organic insulatingfilm prior to the process for forming the reflective electrode 400. Inother words, since the line width of the patterns at the crossing pointswhere the horizontally arranged first grooves 410 a meet with thevertically arranged second grooves 410 b becomes relatively larger thanthat of the patterns at other portions, the crossing points portion isetched relatively deeper than other portions under the same exposurecondition, a planar profile different from the mask pattern shape may beobtained. Accordingly, by forming the groove filling groove 406 togetherwith the mask pattern during forming the mask pattern, an over-etch ofthe organic insulating film at the crossing points with respect to otherportions is prevented to a certain degree, thereby, forming grooveshaving uniform depths at the upper surface of the organic insulatingfilm 370. In other words, the first region portions may be formed so asto have a uniform (or the same) depth.

The protruded portions 405 a, 405 b, 405 c comprising the second regionportions have a track shape 405 a, 405 b or a concave lens shape 405 cextending along the horizontal direction. However, although theprotruded portions 405 a, 405 b, 405 c have the same shape, they havedifferent sizes within a range of approximately 4-20 μm. This canminimize the light interference reflected from the reflective electrode400. In the present embodiment, as shown in FIG. 5B, the reflectivity ofthe reflective electrode 400 is more enhanced by forming grooves havinga crater shape at the protruded portions 405 a, 405 b, 405 c of thesecond region portions 405.

Embodiment 4

FIGS. 10A, 10B, 10C and 10D are enlarged plan views of a reflectiveelectrode in accordance with a fourth embodiment of the presentinvention and show an enlarged picture of the crossing points of thehorizontally arranged grooves and the vertically arranged grooves of thepixels. In the present embodiment, as a whole, the reflective electrode420 preferably has the same shape as that disclosed in Embodiment 1 ofthe present invention. However, it may also have the same shape as inEmbodiment 3. Since a process for forming the reflective electrode ofthe present embodiment is the same as in Embodiment 1 or Embodiment 2,its description would be omitted.

As shown in FIGS. 10A, 10B, 10C and 10D, within a portion where ahorizontally arranged groove 425 crosses a vertically arranged groove426 is formed a groove filling member 430, 431, 432, 433 such as T shape(FIG. 1A), a triangle shape (FIG. 10C), a circle shape (FIG 10D) and aninverse triangle shape (FIG. 10B) which is formed at outer portion ofthe crossing point. These groove filling members 430, 431, 432, 433 areformed using a mask pattern that is used while exposing and developingthe organic insulating film so as to form the reflective electrode 420.In other words, instead of the groove filling member 406 provided inEmbodiment 3, a mask pattern is formed on the mask as shown in FIGS.10A, 10B, 10C and 10D.

The groove filling member 430, 431, 432, 433 formed at the portion wherethe first horizontally arranged groove 425 crosses the second verticallyarranged groove 426 allow the groove to be formed at the same depth asthe groove filling member 430, 431, 432, 433 on the entire surface ofthe pixel after the organic insulating film is exposed and developed soas to form the reflective electrode 420. Generally, depths of the firstgroove 425 and the second groove 426 formed by the organic insulatingfilm which are prepared under the same exposure amount and the samedevelopment condition relate to the width of the first and secondgrooves 425 and 426. In case where the first and second grooves 425 and426 have a width of approximately 5 μm or less, the relationship of thedepth of the first and second grooves 425 and 426 with respect to thewidth of the first and second grooves 425 and 426 more highly increases.Under an exposure amount of approximately 3,700 ms, experimental resultsof the depths of the first and second grooves 425 and 426 depending onthe widths of the first and second grooves 425 and 426 are shown in thefollowing Table 1.

TABLE 1 Width of groove 2 μm 3 μm 4 μm Depth of groove 2,100 Å 8,700 Å10,600 Å

Referring to Table 1, when the widths of the first groove 425 and thesecond groove 426 vary ranging 2 μm, 3 μm, 4 μm respectively, the depthsof the first groove and the second groove change abruptly. To this end,the crossed portions of the first horizontally arranged groove 425 andthe second vertically arranged groove 426 are more deeper than otherportions and the reflective electrode 420 formed on the organicinsulating film has the same problem as the organic insulating film.Thus, the orientation of a liquid crystal substance at the crossedportions is distorted, generating a domain as well as light leakage dueto the deflection of the liquid crystal material. Also, since the lightpolarization is deformed to a large degree at such portions, an opticalcondition of liquid crystal. Changes, lowering the reflectivity of thereflective electrode as well as the contrast and picture quality of animage to a large degree. However, the present embodiment forms thegroove filling members 430, 431, 432 and 433 having various shapes and asize of 1-3 μm at the crossed portion of the first horizontally arrangedgroove 425 of the reflective electrode 420 and the second verticallyarranged groove 426 through a modification of the mask pattern, therebyresolving the aforementioned problems.

Embodiment 5

FIG. 11 is a sectional view of a reflection type LCD in accordance witha fifth embodiment of the present invention. In the present embodiment,except a thin film transistor 560 formed on a first insulating substrate525 and a method for forming the thin film transistor, the remainingelements of the reflective electrode and the method in accordance withthe present embodiment are the same as in Embodiment 1.

Referring to FIG. 11, a reflection type LCD 500 in accordance with thepresent embodiment includes a first substrate 505, a second substratefacing the first substrate 510, a liquid crystal layer 515 interposedbetween the first substrate 505 and the second substrate 510 and areflective electrode formed between the first substrate 505 and theliquid crystal layer 515.

The first substrate 505 includes a first insulating substrate 525 and athin film transistor 560 formed on the first insulating substrate 525.The thin film transistor 560 includes a gate electrode 540, a source anddrain region 545, 550 formed below the gate electrode 540, a gateinsulating film 535 formed between the gate electrode 540 and the sourceand drain region 545, 550, an oxide layer 555 formed on the gateelectrode 540, a source electrode 570 connected to the source region 545and a drain electrode 575 connected to the drain region 550.

An organic insulating film 580 is formed on the entire surface of thefirst substrate 505 on which the thin film transistor is formed andcontinuously a reflective electrode 520 having a plurality of groovesand protruded portions is formed on the organic insulating film 580. Thereflective electrode 520 in accordance with the present embodiment canhave the same shapes as in Embodiment 1, Embodiments 3 and 4 dependingon the mask pattern used. On the reflective electrode 520 is formed anorientation film 590.

The second substrate 510 includes a second insulating substrate 600.Beneath the second insulating substrate 600 are formed a color filter605, a transparent common electrode 610 and a second orientation film615 in the named order. On the second insulating substrate 600, areformed a phase difference plate 620 and a polarizing plate 625 in thenamed order. The liquid crystal layer 515 is formed between the firstorientation film 590 formed on the first substrate 505 and the secondorientation film 615 formed beneath the second substrate 510. Sincethese members are the same as in Embodiment 1, their detaileddescriptions would be omitted.

FIGS. 12A, 12B and 12C are sectional views for describing amanufacturing process of the reflection type LCD shown in FIG. 11.

Referring to FIG. 12A, polysilicon is deposited on an insulatingsubstrate 575 of glass or ceramic and the like by a low pressurechemical vapor deposition method and is then patterned to thereby form apolysilicon layer 530 on the insulating substrate 525.

Thereafter, silicon nitride is deposited on the insulating substrate 525on which the polysilicon layer 530 is formed, by a plasma chemical vapordeposition method, to thereby form a gate insulating film 535.

Afterwards, on the gate insulating film 535 is deposited a metal layersuch as tantalum (Ta), titanium (Ti), molybdenum (Mo), aluminum (Al),chromium (Cr), copper (Cr), tungsten (W), etc. The deposited metal layeris then patterned to form a gate electrode 540 branched from a gateline.

Thereafter, P-typed ions are doped into the polysilicon layer 530through an ion implantation process to thereby form a source region 545and a drain region 55O for a thin film transistor 560. During the ionimplantation process, the gate electrode 540 serves as a mask.

Referring to FIG. 12B, an oxide film 555 is deposited on the insulatingsubstrate 525 on which the gate electrode 540 is formed and thedeposited oxide film 555 and the underlying gate insulating film 535 arepartially etched to thereby form openings 546 and 551 exposing thesource region and drain region 545 and 550 for the thin film transistor560.

While FIG. 12A and FIG. 12B show and describe the process for formingthe N-channel thin film transistor, it is apparent that P-channel thinfilm transistor can be formed according to the same method. Also a PMOStransistor can be formed on a substrate by the steps of forming anisolation film for defining active region and field region using theLOCOS (Local oxidation of silicon) process on the substrate of a P-typesilicon wafer, forming a gate region of a conductive material such as animpurity-doped polysilicon on the active region, and forming a P⁺ sourceregion and drain region.

As shown in FIG. 12C, on the openings 546 and 551 and the oxide film 555is deposited a metal layer such as tantalum (Ta), titanium (Ti),molybdenum (Mo), aluminum (Al), chromium (Cr), copper (Cr), tungsten(W), etc. Then, the deposited metal layer is patterned to form a sourceelectrode 570 and a drain electrode 575. Thereafter, an organicinsulating film 560 is coated on the entire surface of the resultantsubstrate to a thickness range of approximately 1-3 μm by a spin coatingmethod using a photosensitive resist. Since the method for forming areflection type LCD 500 including subsequent exposure and developmentprocess of the organic insulating film 580 and a process of forming areflective electrode 520 is the same as in Embodiment 1, its descriptionwould be omitted.

Embodiment 6

As aforementioned, according to the reflection plate structure of theLCD provided by the inventors while the reflection efficiency isenhanced by forming the first region portions surrounding the secondregion portions at a uniform depth, a region between boundary linesbetween a pixel and another pixel adjacent to the pixel is in a statethat the region is not defined accurately.

Specifically, referring to FIG. 7B, when performing the exposure processusing the mask 355, the pixel region is subject to the exposure processwhile the region between pixels is not exposed. Accordingly, in theunderlying organic insulating film 280, there occurs a height differencebetween the pixel region (Pin) and an outer region of the pixel region(Pout).

The height difference does not allow a uniform rubbing effect during therubbing process for maintaining the alignment of liquid crystalmolecules at a constant level after manufacturing a LCD panel.Especially, since an outer portion placed beyond the boundary of thepixel is highly leveled, the rubbing is performed at a weak level at thestart point of the rubbing process generating a residual image of lightleakage property or distortion of the liquid crystal orientation.

Also, in case where spacers are positioned at the outer portion placedbeyond the boundary of the pixel and highly leveled in the step ofdispersing the spacers prior to injecting liquid crystal, an intervalbetween the first substrate and the second substrate is not constant andthus it is difficult to manufacture a stable LCD.

In addition in the developing process for forming the first regionportions and the second region portions at the organic insulating filmit is difficult to uniformly form the first region portions and thesecond region portions due to the existence of the boundary wall havinga big height difference between pixels.

Moreover, the organic insulating film and the reflection plate or anupper plate and a lower plate are misaligned, the reflectivity becomesgreater and thus it is difficult to obtain a uniform picture quality.

Accordingly, the present embodiment is presented in order to resolve theabove-described drawbacks.

FIG. 13A is a plan layout of a reflection type LCD having a reflectiveelectrode in accordance with a sixth embodiment of the present inventionand FIG. 13B is a schematic view of a section face taken along the lineA-A′.

Referring to FIG. 13A and FIG. 13B, a reflection type LCD 700 includes afirst substrate 710 on which a pixel array is formed, a second substrate720 disposed facing the first substrate, a liquid crystal layer 730formed between the first substrate 710 and the second substrate 720 anda reflective electrode 735 as the pixel electrode formed between thefirst substrate 710 and the liquid crystal layer 730.

The first substrate 710 includes a thin film transistor 745 as theswitching device formed on the first insulating substrate 740.

The first substrate 740 is made of non-conductive material, forinstance, glass or ceramic and the like. The thin film transistor 745includes a gate electrode 750 formed from a gate line 750 a, a gateinsulating film 755, a semiconductor layer 760, an ohmic contact layer765, a source electrode 770 and a drain region 775. Also, beneath thedrain electrode 775 and at the same time on the first insulatingsubstrate 740 is formed a storage electrode 750 b which is formedparallel to the gate line 750 a.

The gate electrode 750 is formed branched from a gate line (not shown inthe drawings) on the first insulating substrate 740 and has adouble-layered structure consisting of a lower layer of chromium (Cr)and an upper layer of aluminum (Al).

The gate insulating film 755 of silicon nitride (Si_(x)N_(y)) is stackedon the entire surface of the first insulating substrate 740 on which thegate electrode 750 is formed. On the gate insulating film 755 beneathwhich the gate electrode 750 is disposed are subsequently formed thesemiconductor layer of amorphous silicon and the ohmic contact layer 765of n⁺ amorphous silicon.

The source electrode 770 and the drain electrode 775 are formed on theohmic contact layer 765 and the gate insulating film centering the gateelectrode 750, thereby completing the thin film transistor 745. Thesource and drain electrodes 770 and 775 are of metal such as tantalum(Ta), molybdenum (Mo), titanium (Ti), chromium (Cr), etc.

On the first insulating substrate 740 on which the thin film transistor745 is formed is stacked an organic insulating film 780 of a materialsuch as resist. A plurality of first region portions (or grooves) and aplurality of second region portions (or protruded portions) having aheight different relative to the first region portions are formed at thepixel region of the organic insulating film 780 for the purpose of lightscattering. Also, the first region portions and the second regionportions both of which are formed at the pixel region are formedextending to the outer region (Pout) placed between the pixel regions.The organic insulating film 780 includes a contact hole 785 exposing aportion of the drain electrode 775 of the thin film transistor 745.

On the contact hole 785 and the organic insulating film 780 is formedthe reflective electrode 735. The reflective electrode 735 is connectedto the drain electrode 775 through the contact hole 785 and thus thethin film transistor 745 is electrically connected with the reflectiveelectrode 735.

On the reflective electrode 735 is stacked a first orientation film 800.

The second substrate 720 facing the first substrate 710 includes asecond insulating substrate 805, a color filter 810, a common electrode815, a second orientation film 820, a phase difference plate 825 and apolarizing plate 830.

The second insulating substrate 805 is also made of glass or ceramic.The phase difference plate 825 and the polarizing plate 830 are disposedin the named order on the second insulating substrate 805. The colorfilter 810 is disposed below the second insulating substrate 805. Thecommon electrode 815 and the second orientation film 820 are formed inthe named order below the color filter 810, thus completing the secondsubstrate 720. The second orientation film 820 pre-tilts liquid crystalmolecules of the liquid crystal layer 730 by a selected angle togetherwith the first orientation film 800.

Between the first substrate 710 ad the second substrate 720 areinterposed spacers 835 and 836 to form a space between them. The liquidcrystal layer 730 is formed at the space between the first substrate 710and the second substrate 720, thereby completing the reflection type LCDin accordance with the present embodiment.

Hereinafter, a method for manufacturing the reflection type LCD inaccordance with the present embodiment will be described with referenceto the accompanying drawings.

FIGS. 14A, 14B, 14C and 14D are sectional views for describing amanufacturing process of the reflection type LCD shown in FIGS. 13A and13B. Throughout FIGS. 14A, 14B, 14C and 14D, the same elements aredesignated by the same reference numerals.

Referring to FIG. 14A, on a first insulating substrate 740 of glass orceramic is deposited a metal layer such as tantalum (Ta), titanium (Ti),molybdenum (Mo), aluminum (Al), chromium (Cr), copper (Cu), tungsten(W), etc. Then, the deposited metal layer is patterned to form a gateline 750 a, a gate electrode 750 branched from the gate line 750 a and astorage electrode line 750 c including a storage electrode 750 b. Atthis time, the gate electrode 750 and the gate line 750 a may becomprised of an alloy of Al—Cu or Al—Si—Cu. Thereafter, silicon nitrideis deposited on the entire surface of the first insulating substrate 740including the gate electrode 750 by a plasma chemical vapor depositionmethod and thus a gate insulating film 755 is formed.

On the gate insulating film 755 are subsequently formed an amorphoussilicon film and in-situ-doped n⁺ amorphous silicon film by a plasmachemical vapor deposition method. Thereafter, the amorphous silicon filmand in-situ-doped n⁺ amorphous silicon film are patterned to form asemiconductor layer 760 and an ohmic contact layer 765 on the gateinsulating film 755 on which the gate electrode 750 is placed.

Subsequently, a layer of metal such as tantalum (Ta), titanium (Ti),molybdenum (Mo), aluminum (Al), chromium (Cr), copper (Cu), tungsten(W), etc. is formed. Then, the deposited metal layer is patterned toform a source line (not shown) perpendicular to the gate line, a sourceelectrode 770 branched from the source line and the drain electrode 775.Thus, a thin film transistor 745 including the gate electrode 750, thesemiconductor layer 760, the ohmic contact layer 765, the sourceelectrode 770 and the drain electrode 775 is completed. At this time,the gate insulating film 755 is interposed between the gate line and thesource line, thereby preventing the gate line from contacting the sourceline.

Next, a photoresist film is deposited on the first insulating substrate740 on which the thin film transistor 745 is formed, to a thickness ofapproximately 1-3 μm by a spin coating method and thus an organicinsulating film 780 is formed to thereby complete the first substrate710. At this time, the organic insulating film 780 is comprised of, forexample, an acryl resin containing a PAC (Photo-active compound), etc.

Referring to FIG. 14B, a first mask 850 is aligned over the organicinsulating film 780 to form a contact hole 785 and then the organicinsulating film is patterned through an exposure and development processto thereby form the contact hole 785 partially exposing the drainelectrode 775 and a plurality of grooves.

Next, there is in detail described a process for forming the contacthole 785 and the plurality of grooves at the upper surface of theorganic insulating film 780.

FIGS. 15A and 15B are sectional views specifically showing a process offorming the contact hole and the plurality of grooves at the uppersurface of the organic insulating film.

Referring to FIGS. 15A and 15B, a first mask 850 is aligned over theorganic insulating film 280 so as to form the contact hole 785 at theorganic insulating film 780 of resist. The first mask 850 has a patterncorresponding to the contact hole 785. Afterwards, the organicinsulating film 780 is subject to a first full exposure process tothereby expose a portion of the organic insulating film 780 placed onthe source/drain electrode 775 to light.

Thereafter, in order to form a plurality of grooves 781 at the organicinsulating film 780, a second mask 855 having a pattern corresponding tothe grooves 781 and for forming micro lens aligned over the organicinsulating film 780.

FIG. 16 is a plan view showing a layout of a pattern formed on thesecond mask 855.

In the second mask 855 shown in FIG. 16 a pattern for forming the secondregion portions extends to an outer region placed between pixels beyondthe boundary line 691 of a unit pixel.

More particularly, referring to FIG. 16, the pattern of the second mask855 for forming the reflective electrode within the pixel is dividedinto first region portions 693 and second region portions 695 having aheight difference relative to the first region portions 693 within theboundary 691 of the pixel. The first region portions 693 are formed suchthat they surround the second region portions 695 in the form of aclosed loop. Here, the first region portions 693 have a constant width.The first region portions 693 are formed in the shape of a groove havinga height lower than the second region portions 695 relatively and thesecond region portions 695 are formed in the shape of protruded portionhaving a height higher than the first region portions 693 relativelysuch that the second region portions 695 serve as micro lenses. Thus, byforming the first region portions at a constant width, the reflectionefficiency is enhanced, improving the image quality of the LCD.

The second mask 855 is, as shown in FIG. 16, manufactured by forming amask pattern corresponding to the first region on a transparentsubstrate.

As shown in the figure, a mask pattern corresponding to the firstregions is formed at the inner region (Pin) of the pixel and is designedto define the first regions and second regions of the reflectiveelectrode as described above. In the present embodiment, the maskpattern corresponding to the first regions is formed extending from theinner region (Pin) of the pixel to an outer region of the pixel which isa region between the pixels.

The second mask 855 may have a pattern having a shape opposite to thepattern shown depending on the resist type.

Using this second mask 855, the remaining portion of the organicinsulating film 780 except for the contact hole portion 785 is exposedto the light through a second exposure process.

Afterwards, the organic insulating film 780 is subject to a developingprocess and thereby the contact hole 785 exposing the source/drainelectrode 775 is formed at the organic insulating film 780 and theplurality of irregular grooves 781 are formed at the upper surface ofthe organic insulating film 780.

As shown in FIG. 15B, the plurality of irregular grooves 781 formed atthe inner region of the pixel are also uniformly formed at the outerregion (Pout) of the pixel between the pixels.

Returning to FIG. 14C, as aforementioned, after a metal layer such asaluminum (Al), nickel (Ni), chromium (Cr), silver (Ag), etc., having agood reflectivity is deposited, the deposited metal layer is patternedto a predetermined pixel form to form the reflective electrode 735.Subsequently, a resist is coated on the reflective electrode 735 and isthen rubbing-treated to form the first orientation film 800 forpre-tilting liquid crystal molecules of the liquid crystal layer by apredetermined angle. The reflective electrode 835 has the same shape asthe upper surface of the organic insulating film 780.

The reflective electrode 735 is divided into first region portions 790and second region portions 795. The first region portions 790 consistsof a plurality of grooves formed at the groove 781 of the organicinsulating film 780 and the second region portions 795 consists of aplurality of protruded portions, which are micro lens region. At thistime, the first region portions 790 consist of continuous grooves andare leveled at a place lower relative to the second region portions 795which correspond to the protruded portions and the second regionportions 795 are surrounded by the first region portions 790, so thatthe reflective electrode 735 has a structure defined by the first regionportions 790 of the continuous grooves.

In the present embodiment, the plurality of grooves of the first regionportions 790 of the reflective electrode 735 have a width of 2-5 μm andthe plurality of protruded portions of the second region portions 795have a size of approximately 4-20 μm, respectively.

Referring to FIG. 14D, on the second insulating substrate 805 aresubsequently formed the color filter 810, the transparent commonelectrode 815 and the second orientation film 820, thereby completingthe second substrate 720. Then, the second substrate 720 is arrangedfacing the first substrate 710. Thereafter, the first substrate 710 andthe second substrate 720 are attached to each other with the spacersinterposed between the first substrate 710 and the second substrate 720,so that a certain space is formed between them. Subsequently, a liquidcrystal material is injected into the space between the first substrate710 and the second substrate 720 using a vacuum injection method andthus the liquid crystal layer 730 is formed, thereby completing thereflection type LCD 700 in accordance with the present embodiment. Also,if necessary, the polarizing plate 830 and the phase difference plate825 may be formed on the entire surface of the second substrate 720.Although not shown in the drawings, black matrix may be disposed betweenthe second insulating substrate 805 and the color filter 810.

FIGS. 17A, 17B, 17C, 17D and 17E are plan views showing mask patternsfor forming a reflective electrode in accordance with anotherembodiments of the present invention.

First, the mask pattern shown in FIG. 17A is similar to that of FIG. 5Aexcept for that a pattern for forming the second region portions extendsto an outer region placed between the pixels beyond the boundary of thepixel.

The mask pattern of FIG. 17A is to form the reflective electrode and isdesigned such that a selected direction has higher reflectivity thanother directions. The reflective electrode manufactured using a maskhaving the mask pattern shown in FIG. 17A includes a plurality of firstregion portions 790 and a plurality of second region portions 795 havinga height difference relative to the first region portions 790. Thesecond region portions 795 are characterized in that a first total sumin first length components arranged along a second direction (orhorizontal direction) perpendicular to a first direction (or verticaldirection) is greater than a second total sum in second lengthcomponents arranged along the first direction perpendicular to thesecond direction such that the second regions have higher reflectivityin the first direction relative to the second direction. For instance,the first region portions 790 are in a groove shape having a heightlower relative to the second region portions 795 and the second regionportions 795 are in a protruded shape having a height higher relative tothe first region portions 790. To the contrary, it is also possible thatthe first region portions 790 are in a protruded shape higher than thesecond region portions 795 and the second region portions 795 are in arecess shape lower than the first region portions 790.

The first region portions 790 include a plurality of first grooves 790 aformed continuously along the horizontal direction. A plurality ofsecond grooves 790 b are formed discontinuously along the verticaldirection between the first grooves 790 a adjacent to each other. In thedrawing, while the second grooves 790 b are formed in the form of an arcsuch that the light can be reflected toward another direction other thanthe first and second direction, they can be formed in an arbitrary shapesuch as a straight line shape, a ring shape, etc.

It is preferable that the second grooves 790 b are formed in such amanner that any grooves among the second grooves 79 b do not meet in astraight line with an adjacent groove arranged along the verticaldirection. Preferably, the number of the second grooves formed along thevertical direction is about 0.5 to 5 every a single horizontal line ofthe unit pixel.

The second region portions 795 are comprised of a plurality of protrudedportions functioning as micro lens. In other words, the first regionportions 790 consisting of continuous recesses in the reflectiveelectrode 735 are leveled to a certain depth at a lower place relativeto the second region portions 795 protruded. Also, the second regionportions 795 consisting of protruded portions relative to the firstregion portions 790 are formed to a certain height on the firstsubstrate 710. The second region portions 795 serving as the micro lensfor enhancing the reflection efficiency are surrounded by the firstregion portion 790 consisting of the first grooves 790 a and the secondgrooves 790 b together with a boundary of a unit pixel. In other words,one of the second region portions 795 positioned at the center portionof a unit pixel region is defined by first two grooves 790 a adjacent toeach other and second two grooves 790 b. The second region portions 795adjacent to the boundary of the unit pixel region are defined by twofirst grooves 790 a adjacent to each other, one of the second grooves790 b and a part of the boundary of the unit pixel.

Due to the directionality of the first region portions 790 thus formed,the protruded portions of the second region portions 795 are orientedalong the first direction of the horizontal direction of a unit pixeland the second direction of the vertical direction of the unit pixel.Accordingly, LCDs in accordance with the present embodiment areapplicable to displays that request high reflectivity along a specificdirection.

The plurality of protruded portions composing the second region portions795 have a variety of shapes such as an ellipse shape 795 a, a waxingcrescent moon or a waning moon shape 795 b, a sectional shape 795 c of aconcave lens, a track shape 795 d, a hemitrack shape 795 e, etc. Also,although the protruded portions of the second region portions 795 mayhave the same shape, they have different sizes.

Each of the first and second grooves 790 a and 790 b in the first regionportions 790 has a width range of approximately 2-5 μm. The protrudedportions of the second region portions 795 have various sizes within arange of approximately 4-20 μm. An interval between the center lines ofthe first grooves 790 a formed parallel to each other along thehorizontal direction is set in a range of 5-20 μm and approximately s8.5μm in an average. An interval between the ridges of the protrudedportions of the second region portions 795 is set in a range of 12-22 μ,approximately 17 μm in an average. Thus, shapes and sizes of theprotruded portions of the second region portions 795 change variously,minimizing the interference of light reflected by the reflectiveelectrode.

The mask pattern shown in FIG. 17B is similar to that of FIG. 17A exceptthat a groove filling protrusion pattern for forming the first regionportions having a uniform depth is formed at a cross point (connectionpoint) of the first region portions in the reflective electrode pattern.Also, the mask pattern shown in FIG. 17B is similar to that of FIG. 9except that a pattern for forming the second region portions extends toan outer region placed between pixels beyond a boundary line 791 of aunit pixel.

A reflective electrode formed by using the mask pattern shown in FIG.17B, has a plurality of first region portions 410 and a plurality ofsecond region portions 405. The first region portions 410 has aplurality of first grooves 410 a formed parallel to each other along thehorizontal direction of the pixel and a plurality of second grooves 410b formed discontinuously along the vertical direction of the pixel. Thesecond region portions 405 has a plurality of protruded portions 405 a,405 b and 405 c surrounded by the first region portions 410 togetherwith the boundary line 791 of the pixel. The protruded portions 405 a,405 b, 405 c composing the second region portions 405 are defined by aplurality of first and second grooves 410 a, 410 b formed along thehorizontal and vertical direction and thus have an islands shape. Groovefilling protrusions 406 are formed at the selected respective protrudedportions 405 a, 405 b and 405 c.

These groove filling protrusions 406 allow recesses to have a constantdepth, in which the recesses are formed at the organic insulating filmin the processes of exposing and developing the organic insulating filmso as to form the reflective electrode 400. In other words, since theline width of the patterns at the crossing points where the horizontallyarranged first grooves 410 a meet with the vertically arranged secondgrooves 410 b becomes relatively larger than that of the patterns atother portions, the crossing point portion is etched relatively deeperthan other portions under the same exposure condition and a planarprofile may be obtained unlike the form formed in the mask pattern.Accordingly, by forming the groove filling groove 406 together with themask pattern during forming the mask pattern, an overetch of the organicinsulating film at the crossing points with respect to other portions isprevented to a certain degree, so that grooves having the same depth maybe formed at the upper surface of the organic insulating film 370. Inother words, the first region portions may be formed so as to have thesame depth.

FIGS. 17C, 17D 17E show mask patterns in accordance with anotherembodiments of the present invention. The mask pattern shown in FIG. 17Cis similar to that of FIG. 17A except that there are no formedvertically arranged patterns for forming the second grooves 790 b of thefirst region portions 790 at the pattern of the reflective electrode.Also, the mask pattern shown in FIG. 17D is similar to that of FIG. 17Aexcept that one vertically arranged pattern for forming the secondgrooves 790 b of the first region portions 790 at the pattern of thereflective electrode is formed between the first grooves of the firstregion portions adjacent to each other per one pixel. The mask patternshown in FIG. 17E is similar to that of FIG. 17A except that 0.5 ofvertically arranged pattern for forming the second grooves 790 b of thefirst region portions 790 at the pattern of the reflective electrode isformed between the first grooves of the first region portions adjacentto each other per pixel.

According to the aforementioned embodiment, when forming an organicinsulating film prior to forming a reflective electrode, a groove isformed at an outer region of a pixel placed between pixels in the samemanner as in the pixel region. As a result, there is not formed a heightdifference between the pixel region and the outer region of the pixelregion. Accordingly, light leakage induced residual images or distortionphenomenon in the liquid crystal orientation can be reduced. Further,after the spacers are dispersed, a uniform gap is maintained between thefirst substrate and the second substrate.

Furthermore, the LCD in accordance with the present invention isprovided with a plurality of first grooves arranged continuously alongthe horizontal direction, a plurality of second grooves arrangeddiscontinuously along the vertical direction and a reflective electrodeof micro lenses defined and oriented by the first grooves and the secondgrooves, thereby having a reflection efficiency, enhanced largely alonga specific direction compared with the conventional reflection LCD.Accordingly, the contrast and image quality are remarkably improved.

Reflectivity Measurements

FIGS. 18A, 18B and 18C are plan views of reflective electrodes (or maskpatterns) corresponding to a unit pixel in order to form a reflectiveelectrode in accordance with embodiments of the present invention.

Using mask patterns shown in FIGS. 18A, 18B and 18C and FIG. 9, LCDshaving a reflective electrode were manufactured in accordance withEmbodiment 2.

FIG. 18A shows a mask pattern in which a single second groove is formedbetween first grooves extending along the horizontal direction, FIG. 18Cshows a mask pattern in which only the first groove is formed and FIG.18C shows a mask pattern in which 0.5 second groove per a horizontallength of a unit pixel is formed between first grooves.

The following Table 2 shows reflectivity values obtained using LCDpanels including the reflective electrodes shown in FIGS. 18A, 18B and18C and FIG. 9.

Upon measuring the reflectivity in the horizontal direction, light wasincident with an inclination angle of 30 degrees in an upward directionand upon measuring the reflectivity in the vertical direction, the lightwas incident with an inclination angle of 30 degrees in left or rightdirection. At this time, resultant reflectivity was obtained from thefollowing Equation 2.R(Reflectivity)=(Measured reflectivity of an LCD panel/Reflectivity ofstandard reflection plate (BaSO4)×100  Eq. 2

Measured reflectivities from the front side are shown in the below Table2.

TABLE 2 Reflectivity in Reflectivity in vertical direction horizontaldirection Kind of W/D W/D Mask reflectivity C/R reflectivity C/R FIG.18A 78.5/2.81 27.93 12.1/0.55 22 FIG. 18B 232.8/11.4  20.42 0.35/0.17 2FIG. 18C  153/5.16 29.65 5.1/0.3 17 FIG. 9 35.4/1.03 34.36   14/0.3836.84 Note 1) W/D reflectivity represents white reflectivity/darkreflectivity. White reflectivity is a value measured in a state in whichan LCD panel is not driven and dark reflectivity is a value measured ina state in which an LCD panel is driven. Note 2) C/R represents contrastratio.

Also, the reflectivity was measured varying a viewing angle from thefront side to a vertical direction or a horizontal direction using theLCD panel including the reflective electrode shown in FIGS. 18A, 18B and18C and FIG. 9.

Light was incident from a point with an inclination of 30 degrees upwardfrom the front side of the panel and the reflectivity of the reflectedlight was measured with respect to angles varied up to an angle of 50degrees upward or along the left direction from the front side. Finalreflectivity was obtained from the above Equation 2.

FIGS. 19A and 19B are graphs showing variations in the reflectivitywhich was measured by using an LCD having the reflective electrode shownin FIG. 18A.

Particularly, FIG. 19A shows a variation in the reflectivity which wasmeasured with varying the reflection angle upward from the front side ofthe LCD panel and FIG. 19B shows a variation in the reflectivity whichwas measured with varying the reflection angle along the left directionfrom the front side of the LCD panel.

FIGS. 20A and 20B are graphs showing a variation in the reflectivitymeasured using an LCD having the reflective electrode shown in FIG. 18B.Particularly, FIG. 20A shows a variation in the reflectivity which wasmeasured with varying the reflection angle upward from the front side ofthe LCD panel and FIG. 20B shows a variation in the reflectivity whichwas measured with varying the reflection angle along the left directionfrom the front side of the LCD panel.

FIGS. 21A and 21B are graphs showing a variation in the reflectivitymeasured using an LCD having the reflective electrode shown in FIG. 18C.Particularly, FIG. 21A shows a variation in the reflectivity which wasmeasured with varying the reflection angle upward from the front side ofthe LCD panel and FIG. 21B shows a variation in the reflectivity whichwas measured with varying the reflection angle along the left directionfrom the front side of the LCD panel.

FIGS. 22A and 22B are graphs showing a variation in the reflectivitymeasured using an LCD having the reflective electrode shown in FIG. 9.Particularly, FIG. 22A shows a variation in the reflectivity which wasmeasured with varying the reflection angle upward from the front side ofthe LCD panel and FIG. 20B shows a variation in the reflectivity whichwas measured with varying the refection angle along the left directionfrom the front side of the LCD panel.

Through FIGS. 19A, 19B, 20A, 20B, 21A, 21B, 22A and 22B, the verticalaxis represents measured reflectivity and horizontal axis represents anangle at the front side of the LCD panel. Also, the symbol ♦ meansvalues measured in white state in which the LCD panel is not driven, ▮means values measured in dark state in which the LCD panel is driven and▴ means contrast ratio.

As shown in Table 2 and the graphs in FIGS. 19A to 22B, the LCD panelhaving the reflective electrode in accordance with the present inventionshows that the reflectivity in the vertical direction is higher than thereflectivity in the horizontal direction. Accordingly, when such theLCDs are applied to apparatus in which the reflectivity in the verticaldirection is especially important, light efficiency can be enhanced.

In addition, when the second grooves are not formed as shown in FIG.18B, the reflectivity in the vertical direction is too high, and thereflectivity in the horizontal direction is too low. Accordingly, it canbe noted that the second grooves are preferably at least 0.5 per a unitpixel.

In case of hand-held terminals, it is proved that the reflectivity inthe vertical direction to the reflectivity in the horizontal directionis preferably 2:1 to 3:1 and the contrast ratio is preferably 30:1 to40:1.

As described above, the reflection type LCD in accordance with thepresent invention includes a plurality of first grooves arrangedcontinuously along the horizontal direction, a plurality of secondgrooves arranged discontinuously along the vertical direction and areflective electrode of directional micro lenses defined by the firstgrooves and the second grooves, thereby having an enhanced reflectionefficiency with respect to a specific direction compared with theconventional reflection type LCD. Accordingly, the contrast and imagequality may be improved remarkably.

Also, since the micro lenses are oriented along the horizontal orvertical direction of the pixel, it is suitable for electronic displaysthat need a high reflectivity in a specific direction.

In addition, since the groove filling member having a variety of shapesis formed at the crossing points of the grooves in the reflectiveelectrode, the reflectivity of the reflective electrode may be improvedmore highly to largely improve the contrast and image quality.

Further, when forming the organic insulating film prior to forming thereflective electrode, the grooves are formed at an outer region betweenpixels in the same manner as in the inner region of the pixel. Thus,there does not occur a height difference between the pixel region andthe outer region between pixels. Accordingly, the light leakage inducedresidual image or distortion phenomenon in orientation of liquid crystalmay be reduced. Furthermore, a uniform gap between the first substrateand the second substrate even after dispersing the spacers may beobtained.

Although the aforementioned embodiments show and describe an example ofan LCD having a reflective electrode, it is apparent that the reflectiveelectrode of the present invention can be applied to electrode displaysneeding these reflective electrodes. In such a case, the lightefficiency can be enhanced by controlling the reflectivity such that thereflectivity in the vertical direction differs from the reflectivity inthe horizontal direction.

While the present invention has been described in detail, it should beunderstood that various changes, substitutions and alterations can bemade hereto without departing from the spirit and scope of the inventionas defined by the appended claims.

For example, in case of the backlight LCD, the concave-convex structureis not formed on the protective layer, and a transparent conductivematerial such as ITO and IZO is used as the reflective electrode and padmaterial.

1. A liquid crystal display apparatus comprising: a first substratecomprising a base substrate and a reflective electrode including aplurality of first grooves extending in a first direction and aplurality of second grooves connecting the first grooves adjacent toeach other, such that the reflective electrode has higher reflectivityin a second direction substantially perpendicular to the first directionthan in the first direction, a second substrate facings the firstsubstrate and having a color filter; and a liquid crystal layer betweenthe first substrate and the second substrate.
 2. The liquid crystaldisplay apparatus of claim 1, wherein the second grooves have a curvedshape and/or a straight shape.
 3. The liquid crystal display apparatusof claim 1, wherein sizes of protrusions defined by the first groovesadjacent to each other and the second grooves adjacent to each other areirregular.
 4. The liquid crystal display apparatus of claim 3, whereinthe protrusions have at least one shape selected from the groupconsisting of an ellipse shape, a waxing crescent moon shape, a waningmoon shape, a track shape, a half-track shape and an extended concavelens shape.
 5. The liquid crystal display apparatus of claim 3, whereina distance between centers of the protrusions adjacent to each other isabout 12 μm to about 22 μm.
 6. The liquid crystal display apparatus ofclaim 5, wherein the reflective electrode comprises at least oneselected from the group consisting of aluminum, nickel, chromium andsilver.
 7. The liquid crystal display apparatus of claim 1, wherein atleast a portion of the protrusions comprises a scattering recess.
 8. Theliquid crystal display apparatus of claim 7, wherein a size of thescattering recess is about 2 μm to about 3 μm.
 9. The liquid crystaldisplay apparatus of claim 1, wherein the first substrate furthercomprises a thin film transistor having a gate electrode, a gateinsulating layer, a semiconductor layer, an ohmic contact layer, asource electrode and a drain electrode electrically connected to thereflective electrode.
 10. The liquid crystal display apparatus of claim1, wherein the first substrate further comprises an organic insulatingfilm formed between the base substrate and the reflective electrode suchthat the organic insulating film has substantially a same surfacestructure as the reflective electrode.
 11. The liquid crystal displayapparatus of claim 10, wherein the organic insulating film has a contacthole exposing at least a portion of the drain electrode and thereflective electrode is electrically connected to the drain electrodethrough the contact hole.
 12. A liquid crystal display apparatuscomprising: a first substrate comprising a base substrate and areflective electrode including a plurality of protrusions and aplurality of grooves surrounding the protrusions, such that thereflective electrode has higher reflectivity in a second directionsubstantially perpendicular to the first direction than in the firstdirection, a second substrate facing the first substrate and having acolor filter; and a liquid crystal layer between the first substrate andthe second substrate.